Topology of synthetic, boron-doped diamond by scanning tunneling microscopy



Shenda M. Bakera, George R. Rossmanb and John D. Baldeschwielera

aDivision of Chemistry and Chemical Engineering,
bDivision of Geological and Planetary Sciences, Arthur Amos Noyes Laboratory
California Institute of Technology, Pasadena, CA 9112S (USA)


Abstract

    Scanning tunneling microscopy (STM) studies were performed on a large, boron-doped, synthetic diamond crystal in order to examine its surface morphology and growth characteristics. This single crystal synthetic diamond should better mimic naturally grown diamonds than thin diamond films which may be affected by the substrate or the deposition technique used. The synthetic diamond is shown to exhibit microscopic features similar to the macroscopic features observed on natural diamonds indicating similar growth and/or defect properties. The ability to obtain adequate current for this STM study is a result of the high boron content in the synthetic diamond, which is much higher than that of natural diamonds.